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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTORNPN (c) TO 220 FEATURES Power dissipation PCM : 2 W Tamb=25ae(c) Collector current ICM: 8 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(c) 1 DC current gain hFE(c) 2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Fall time Storage time VCE(sat) VBE(sat) fT VCE=5 V, IC=5A IC=2A,IB=0.4A IC=2A, IB= 0.4A Ic=500mA,VCE=10V f=1MH Z 1.BASE 2.COLLECTOR 3.EMITTER 123 unless Test otherwise specified(c) TYP MAX UNIT V V V 1 100 8 5 40 30 1 1.2 4 80 0.7 3 V V MHZ mA A conditions MIN 700 400 9 Ic= 1mA =0 IE Ic= 10m A =0 IB IE= 1mA =0 IC VCB= 700VIE=0 VEB= 9 VIC=0 VCE= 5V, IC= 2 A Cob tf ts VCE=10,I E=0 f=0.1MHz Vcc=125V, Ic=5A IB1=-IB2=1A pF s s CLASSIFICATION OF h FE(1) Rank Range 8-15 15-20 20-25 25-30 30-35 35-40 TO-220-3L PACKAGE OUTLINE DIMENSIONS D |O A C1 E1 F L1 b1 E A1 b L e e1 C Symbol A A1 b b1 c c1 D E E1 e e1 F L L1 |O Dimensions In Millimeters Min 4.470 2.520 0.710 1.170 0.310 1.710 10.010 8.500 12.060 2.540TYP 4.980 2.590 13.400 3.560 3.790 5.180 2.890 13.800 3.960 3.890 Max 4.670 2.820 0.910 1.370 0.530 1.370 10.310 8.900 12.460 Min Dimensions In Inches Max 0.184 0.111 0.036 0.054 0.021 0.054 0.406 0.350 0.491 0.100TYP 0.196 0.102 0.528 0.140 0.149 0.204 0.114 0.543 0.156 0.153 1.176 0.099 0.028 0.046 0.012 0.046 0.394 0.335 0.475 |
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